丝印：IRF100P218；Package：PG-TO247-3；MOSFET StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

文件：1.14013 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：IRF100P218；Package：PG-TO247-3；MOSFET StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

文件：1.14013 Mbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 209A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.28mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

文件：341.22 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

文件：1.14013 Mbytes 页数：11 Pages

Infineon

英飞凌

UPS and Inverter applications

文件：1.07159 Mbytes 页数：17 Pages

Infineon

英飞凌