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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010EZSPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSTRLP	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010N	文件：211.92 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS = 55V RDS(on) = 11mΩ ID = 85A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：211.92 Kbytes 页数：8 Pages	IRF	IRF
IRF1010NL	文件：146.82 Kbytes Page：10 Pages	Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：146.82 Kbytes 页数：10 Pages	IRF	IRF
IRF1010NL	文件：1.07508 Mbytes Page：10 Pages	Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.07508 Mbytes 页数：10 Pages	KERSEMI	KERSEMI
IRF1010NLPBF	文件：297.24 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：297.24 Kbytes 页数：11 Pages	IRF	IRF
IRF1010NPBF	文件：182.65 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：182.65 Kbytes 页数：8 Pages	IRF	IRF
IRF1010NPBF	文件：3.0715 Mbytes Page：8 Pages	Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：3.0715 Mbytes 页数：8 Pages	KERSEMI	KERSEMI
IRF1010NS	文件：1.07508 Mbytes Page：10 Pages	Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件：1.07508 Mbytes 页数：10 Pages	KERSEMI	KERSEMI
IRF1010NS	文件：146.82 Kbytes Page：10 Pages	Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：146.82 Kbytes 页数：10 Pages	IRF	IRF

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技术参数

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 mΩ
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF	IR	22+	263	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRF	IR	23+	263	7000		询价
深圳市海天鸿电子科技有限公司	IRF4905SPBF	IR	1725+	?	7500	只做原装进口,假一罚十	询价
深圳市卓越微芯电子有限公司	IRFB4110PBF	IR-韩国产	25+	TO-220	16402	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市欧亚佳电子有限公司	IRF7301PbF	IR	20+	SOP8	11520	特价全新原装公司现货	询价
深圳市湘达电子科技有限公司	IRFM240其他被动元件	IR	2022+		45	只做原装,价格优惠,长期供货。	询价
艾睿（深圳）半导体有限公司	IRFHM792TRPBF	Infineon(英飞凌)	2447	PQFN3.3X3.38L	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳诚思涵科技有限公司	IRFB7437PBF	ADI/亚德诺	23+		5000	一站式BOM配单	询价
深圳市盈慧通电子有限公司	IRF634B	ST	22+	原厂原封	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价

更多IRF供应商更新时间2026-4-21 14:00:00

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