IRF1010N中文资料IRF数据手册PDF规格书
IRF1010N规格书详情
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
描述 Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
产品属性
- 型号：
IRF1010N
- 功能描述：
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
276118 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
25+23+ |
TO-220 |
27273 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
23+ |
DIP |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-220 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
1923+ |
TO-263 |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
2025+ |
TO-220 |
5185 |
全新原厂原装产品、公司现货销售 |
询价 |
