IRF1010N中文资料IRF数据手册PDF规格书
IRF1010N规格书详情
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
产品属性
- 型号：
IRF1010N
- 功能描述：
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
368 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
2016+ |
TO220 |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
23+ |
TO-220 |
12000 |
全新原装假一赔十 |
询价 | ||
IR |
24+ |
D2PAK |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
BB |
23+ |
8MSOP |
8931 |
询价 | |||
IR |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
13+ |
TO-220 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
TO-220 |
276118 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
