IRF1010N中文资料IRF数据手册PDF规格书
IRF1010N规格书详情
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
描述 Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
产品属性
- 型号：
IRF1010N
- 功能描述：
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
D2PAK |
25000 |
原装正品,假一赔十! |
询价 | ||
BB |
NEW |
8MSOP |
8931 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
IR |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
24+ |
NA/ |
368 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
25+23+ |
TO-220 |
27273 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON |
2450+ |
TO-220 |
18500 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
询价 | ||
Infineon/英飞凌 |
21+ |
D2PAK |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 |
