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IRF131

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件:180.59 Kbytes 页数:6 Pages

FAIRCHILD

仙童半导体

IRF131

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件:211.72 Kbytes 页数:5 Pages

SAMSUNG

三星

IRF1310N

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:96.76 Kbytes 页数:8 Pages

IRF

IRF1310N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.036Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件:338.58 Kbytes 页数:2 Pages

ISC

无锡固电

IRF1310NL

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件:1.16562 Mbytes 页数:10 Pages

KERSEMI

IRF1310NL

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:156.84 Kbytes 页数:10 Pages

IRF

IRF1310NLPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:725.79 Kbytes 页数:11 Pages

IRF

IRF1310NS

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件:1.06153 Mbytes 页数:10 Pages

KERSEMI

IRF1310NS

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:156.84 Kbytes 页数:10 Pages

IRF

IRF1310NSPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:725.79 Kbytes 页数:11 Pages

IRF

技术参数

  • OPN:

    IRF100B201

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    100 V

  • RDS (on) @10V max:

    4.2 mΩ

  • ID @25°C max:

    192 A

  • QG typ @10V:

    170 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
IR
25+
TO-3P
18000
原厂直接发货进口原装
询价
IR
TO
1100
正品原装--自家现货-实单可谈
询价
Fairchi
24+
DXPAK
6000
进口原装正品假一赔十,货期7-10天
询价
SAMSUNG
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
IR
25+
TO263
783
旗舰店
询价
IOR
05+
SOP8
860
原装现货海量库存欢迎咨询
询价
INF
22+
30000
原装现货,假一罚十,可含税原进项
询价
更多IRF供应商 更新时间2026-1-17 14:00:00