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IRF1310N

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310N

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NLPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

Fully Avalanche Rated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NSPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310S

Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

VDSS=100V RDS(on)=0.04Ω ID=41A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRF1312

HEXFET Power MOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters •MotorControl •Uninterru

IRF

International Rectifier

详细参数

  • 型号:

    IRF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
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IR
23+
263
8000
专注配单,只做原装进口现货
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IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
Fairchi
24+
DXPAK
6000
进口原装正品假一赔十,货期7-10天
询价
IR
17+
DIP-4
6200
100%原装正品现货
询价
IR-韩国产
2020+
TO-220
16402
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
1725+
?
7500
只做原装进口,假一罚十
询价
IRF
4000一盘
13+
0
SOP8
询价
IRF
24+
SOP-8P
400
现货
询价
更多IRF供应商 更新时间2025-6-29 14:00:00