N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

文件：125.37 Kbytes 页数：4 Pages

Fairchild

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：210.79 Kbytes 页数：5 Pages

Samsung

三星

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：136.47 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Power,High Speed Applications

文件：48.18 Kbytes 页数：2 Pages

ISC

无锡固电

Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3

NJS

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件：178.39 Kbytes 页数：6 Pages

IRF

AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS

文件：208.3 Kbytes 页数：5 Pages

etc2List of Unclassifed Manufacturers

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