IRF1520G中文资料IRF数据手册PDF规格书

描述 Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

● Isolated Package

● High Voltage Isolation = 2.5 kVRMS

● Sink to Lead Creepage Dist. = 4.8 mm

● 175 °C Operating Temperature

● Dynamic dV/dt Rating

● Low Thermal Resistance