Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：234.11 Kbytes 页数：9 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤7.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.78 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-220AB 封装的 75V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：160.22 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：261.98 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：261.98 Kbytes 页数：9 Pages

IRF