8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description\nThese are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applicati • 8.1A and 6.5A, 275V and 250V\n• rDS(ON) = 0.45Ω and 0.68Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• 275V, 250V DC Rated - 120V AC Line System Operation\n• Related Literatur;

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