| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NTE235 | Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. 文件:20.82 Kbytes 页数:2 Pages | NTE | NTE | |
NTE235 | Bi-Polar transistor Selector Guide | NTE | NTE | |
Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC 文件:26.78 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon Complementary Transistors Darlington Power Amp, Switch Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A 文件:24.3 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon Complementary Transistors Darlington Power Amp, Switch Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A 文件:24.3 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode Features: • High Speed: tf = 100nsec • High Breakdown Voltage: VCBO = 1500V • On–Chip Damper Diode 文件:21.84 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Features: • Fast speed: tf = 100ns Typ • High breakdown voltage: VCBO = 1500V • High reliability Applications: • High–definition color display horizontal deflection output 文件:20.65 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors Features: • Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver 文件:24.13 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors Features: • Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver 文件:24.13 Kbytes 页数:2 Pages | NTE | NTE | ||
Silicon Complementary Transistors Digital w/2 Built-In 22k Bias Resistors Features: • Built–In Bias Resistor (R1 = 22kΩ, R2 = 22kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver 文件:24.09 Kbytes 页数:2 Pages | NTE | NTE |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 | ||||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NTE |
23+ |
TO264 |
39275 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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