IRF237中文资料INTERSIL数据手册PDF规格书

描述 Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

特性 Features

• 8.1A and 6.5A, 275V and 250V

• rDS(ON) = 0.45Ω and 0.68Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275V, 250V DC Rated - 120V AC Line System Operation

• Related Literature

   - TB334 “Guidelines for Soldering Surface Mount

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