150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V • Low gate charge

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.7A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =80mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 20 A RDS(ON)

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BYCHIP

百域芯

150V N-Channel PowerTrench MOSFET

ONSEMI

安森美半导体