N-Channel PowerTrench MOSFET 150V, 21A, 66m

Features • rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

文件：268.34 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ

Features • rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architecture

文件：466.73 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=21A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =66mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.22 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 20 A RDS(ON)

文件：685.83 Kbytes 页数：4 Pages

BYCHIP

百域芯

N 沟道，PowerTrench® MOSFET，150V，21A，66mΩ

N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ •rDS(ON) = 58mΩ（典型值），VGS = 10V，ID = 7A\n•Qg(tot) = 19nC（典型值），VGS = 10V\n•低密勒电荷\n•低Qrr体二极管\n•UIS能力（单脉冲和重复脉冲）\n•符合AEC Q101;

ONSEMI

安森美半导体