Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM

General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel

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FAIRCHILD

仙童半导体

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ

Features Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant General Description These dual

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ONSEMI

安森美半导体

双 N 和 P 沟道 PowerTrench® MOSFET，80V

这些双N沟道和P沟道增强模式功率MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性能而定制的。 • N-Channel: 80V, 13.9A, 80mΩ\n• P-Channel: -80V, -9.4A, 190mΩ\n• Q1： N沟道\n•最大rDS(on) = 88m? VGS = 6V, ID = 4.1A时Q2: P沟道\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH RECEPTACLE

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OPTOWAY

奥普薇

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH RECEPTACLE

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OPTOWAY

奥普薇

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH RECEPTACLE

文件：133.56 Kbytes 页数：2 Pages

OPTOWAY

奥普薇