FDD3510H中文资料PDF规格书
FDD3510H规格书详情
General Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
Q1: N-Channel
■ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
■ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
Q2: P-Channel
■ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
■ Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
■ 100 UIL Tested
■ RoHS Compliant
Applications
■ Inverter
■ H-Bridge
产品属性
- 型号：
FDD3510H
- 功能描述：
MOSFET 80V Dual N & P-Chan PowerTrench
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-252 |
12356 |
只做全新原装正品货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-252 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ON/安森美 |
2310+ |
SOP/DIP |
3699 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
ON/安森美 |
23+ |
NA |
6000 |
原装正品,优势订货 |
询价 | ||
Fairchild/ON |
22+ |
TO2524L |
9000 |
原厂渠道,现货配单 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-2525L(DPAK) |
10000 |
公司只做原装正品 |
询价 | ||
ON |
21+ |
TO-252 |
103553 |
原装现货假一赔十 |
询价 | ||
Fairchild |
07+/08+ |
TO-252 |
7500 |
询价 | |||
ON |
2023+ |
TO-252 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ON/安森美 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |
