35V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Features • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=59A@ TC=25℃ ·Drain Source Voltage : VDSS=35V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

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Bychip

百域芯

N 沟道，PowerTrench® MOSFET，35V，59A，10mΩ

此N沟道MOSFET使用飞兆半导体专有PowerTrench技术生产，具有低Rdson和优化的Bvdss能力，在各种应用中都具有优异的性能。 •59 A, 35V\n•最大RDS(ON) = 10 mΩ @ VGS = 10 V\n•最大RDS(ON) = 13 mΩ @ VGS = 4.5 V\n•快速开关\n•符合RoHS标准;

ONSEMI

安森美半导体