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B31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IIRFB31N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB31N20

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB31N20D

SEMICONDUCTORS

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IRFB31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20DTRLP

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL31N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFSL31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
IR
23+
TO220
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
VBSEMI
19+
TO-220
29600
绝对原装现货,价格优势!
询价
-
21+ROHS
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INFINEON/英飞凌场效应管
24+23+
TO-220
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
08+(pbfree)
8866
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
IR
23+
08+
6500
专注配单,只做原装进口现货
询价
Liteon
16+
DO-221AC
48790
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
更多FB31N20DPBF供应商 更新时间2024-6-17 15:38:00