HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A )

Applications High Frequency DC-DC converters Lead-Free
 Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design,
Fully Characterized Avalanche Voltage and Current

文件：295.33 Kbytes 页数：12 Pages

IRF

High Frequency DC-DC converters

文件：296.29 Kbytes 页数：12 Pages

IRF

THINKI 40A,200V Matured Planar N-Channel Power MOSFETs

Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：1.6825 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

文件：190.95 Kbytes 页数：11 Pages

IRF

THINKI 40A,200V Matured Planar N-Channel Power MOSFETs

Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：1.29941 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

THINKI 40A,200V Matured Planar N-Channel Power MOSFETs

Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：1.29941 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体