丝印：C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H

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丝印：C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：933.85 Kbytes 页数：11 Pages

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Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.06209 Mbytes 页数：12 Pages

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Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.06295 Mbytes 页数：12 Pages

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Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.25713 Mbytes 页数：13 Pages

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