丝印：C3M0025065J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • R

文件：1.0347 Mbytes 页数：11 Pages

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SiC N-Channel MOSFET

FEATURES ·Optimized Package with Separate Driver Source Pin ·High Bloking Voltage with Low On-Resistance ·High-Speed Swicthing with Low Capability APPLICATIONS ·Solar Inverters ·EV Battery Charges ·High Voltage DC/DC Converters ·Energy Storage Systems

文件：326.27 Kbytes 页数：3 Pages

ISC

无锡固电

650 V Discrete Silicon Carbide MOSFETs

Low On-State Resistance over TemperatureLow Parasitic CapacitancesFast Diode with ultra low reverse recoveryHigh Temperature Operation (TJ = 175°C)Kelvin Source PinIndustry Standard Through-Hole & SMT Packages • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages;

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TO-247-4

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TO-263-7

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