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C3M0021120D

1200 V Discrete Silicon Carbide MOSFETs; • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements\n;

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements \n\n

Wolfspeed(CREE)

WOLFSPEED, INC.

C3M0021120D

丝印:C3M0021120D;Package:TO247-3;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H

WOLFSPEED

WOLFSPEED, INC.

C3M0021120D

SiC MOS;

ChipNobochipnobo Microelectronics Co., Ltd.

无边界无边界微电子有限公司

C3M0021120D

碳化硅 MOSFET; 低电容,高频开关,高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装\n;

GDSICSEMI

广大碳基

GDSICSEMI

C3M0021120D

丝印:C3M0021120D;Package:TO247-3;Silicon Carbide Power MOSFET C3MTM MOSFET Technology

CreeCree, Inc

科锐

C3M0021120K

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=28.8mΩ@VGS=15VTj=25℃ ·LowCapacitance ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·HighVoltageDC-DCConverters ·BatteryChargers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

C3M0021120K

SiliconCarbidePowerMOSFETC3MTMMOSFETTechnologyN-ChannelEnhancementMode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery

WOLFSPEED

WOLFSPEED, INC.

C3M0021120K

SiliconCarbidePowerMOSFETC3MTMMOSFETTechnology

CreeCree, Inc

科锐

E3M0021120K

SiliconCarbidePowerMOSFETE-SeriesAutomotiveN-ChannelEnhancementMode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery

WOLFSPEED

WOLFSPEED, INC.

技术参数

  • Current Rating at 25°C:

    100 A

  • RDS(ON) at 25°C:

    21 mΩ

  • Package:

    TO-247-3

  • Gate charge total:

    160 nC

  • Maximum junction temperature:

    175 ˚C

  • Reverse-Recovery Charge (Qrr):

    879 nC

  • Output Capacitance:

    180 pF

  • Reverse-Recover Time (Trr):

    81 ns

供应商型号品牌批号封装库存备注价格
CREE
2021+
TO-247
12000
勤思达 只做原装 现货库存
询价
CREE
2021+
TO-247
9000
原装现货,随时欢迎询价
询价
CREE/科锐
25+
TO-247
1800
原厂原装,价格优势
询价
CREE
23+
TO-247
450
询价
CREE
24+
NA/
3700
原装现货,当天可交货,原型号开票
询价
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
CREE/科锐
24+
TO-247-3
60000
全新原装现货
询价
CREE
21+
TO-247
450
原装现货假一赔十
询价
Wolfspeed
25+
Tube
4430
郑重承诺只做原装进口现货
询价
CREE
24+
TO-247
9000
只做原装,欢迎询价,量大价优
询价
更多C3M0021120D供应商 更新时间2025-7-28 11:04:00