丝印：C3M0120065K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.04703 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0120065K；Package：TO-247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.0479 Mbytes 页数：12 Pages

Cree

科锐

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

650 V Discrete Silicon Carbide MOSFETs

Low On-State Resistance over TemperatureLow Parasitic CapacitancesFast Diode with ultra low reverse recoveryHigh Temperature Operation (TJ = 175°C)Kelvin Source PinIndustry Standard Through-Hole & SMT Packages • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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