丝印：C3M0065090；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Incre

文件：749.04 Kbytes 页数：10 Pages

WOLFSPEED

Silicon Carbide Power MOSFET

文件：1.25074 Mbytes 页数：10 Pages

Cree

科锐

900 V Discrete Silicon Carbide MOSFETs

Minimum of 900V Vbr across entire operating temperature rangeLow-impedance package with driver sourceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive • Minimum of 900V Vbr across entire operating temperature range\n• Low-impedance package with driver source\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive;

Wolfspeed(CREE)

Silicon Carbide Power MOSFET

文件：1.33657 Mbytes 页数：10 Pages

Cree

科锐

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3M SiC MOSFET technology • New low impedance package with driver source pin • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant • Wide creepage (~7mm) between dra

文件：935.31 Kbytes 页数：10 Pages

WOLFSPEED

Silicon Carbide Power MOSFET E-Series Automotive

文件：853.29 Kbytes 页数：10 Pages

Cree

科锐