Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3M SiC MOSFET technology • New low impedance package with driver source pin • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant • Wide creepage (~7mm) between dra

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Silicon Carbide Power MOSFET

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900 V Discrete Silicon Carbide MOSFETs

Minimum of 900V Vbr across entire operating temperature rangeLow-impedance package with driver sourceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive • Minimum of 900V Vbr across entire operating temperature range\n• Low-impedance package with driver source\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive;

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Silicon Carbide Power MOSFET E-Series Automotive

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