丝印：C3M0065100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halog

文件：1.00879 Mbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0065100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.37022 Mbytes 页数：10 Pages

Cree

科锐

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 78mΩ）@VGS=15V Tc=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Renewable energy ·EV battery chargers ·High voltage DC/DC converters ·Switch Mode Power Supplies

文件：399.41 Kbytes 页数：4 Pages

ISC

无锡固电

1000 V Discrete SiC MOSFETs

Minimum of 1kV Vbr across entire operating temperature range (no need to derate)High-speed switching with low output capacitanceFast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to driveKelvin source pin to reduce switching losses and ringing • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)\n• High-speed switching with low output capacitance\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive\n• Kelvin source pin to reduce switching losses and ringing;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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