丝印：C3M0065100K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr

文件：974.94 Kbytes 页数：11 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)=78mΩ（TYP.）@VGS=15V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：771.05 Kbytes 页数：7 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.42424 Mbytes 页数：11 Pages

Cree

科锐

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

1000 V Discrete SiC MOSFETs

Minimum of 1kV Vbr across entire operating temperature range (no need to derate)High-speed switching with low output capacitanceFast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to driveKelvin source pin to reduce switching losses and ringing • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)\n• High-speed switching with low output capacitance\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive\n• Kelvin source pin to reduce switching losses and ringing;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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