丝印：C3M0040120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.02005 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0040120K；Package：TO-247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.02091 Mbytes 页数：12 Pages

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科锐

丝印：C3M0040120K1；Package：TO-247-4L-LP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.07762 Mbytes 页数：13 Pages

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1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements  • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements;

Wolfspeed(CREE)

分立式碳化硅肖特基二极管

1200 V, 40 mΩ, TO-247-4 LP package, Industrial qualified, Discrete SiC MOSFET • Stable RDS(ON) over temperature\n• Reduction of heat-sink requirements;

Wolfspeed(CREE)