丝印：C3M0030090K；Package：TO247-4；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.44851 Mbytes 页数：11 Pages

CREE

科锐

SiC N-Channel MOSFET

FEATURES ·Optimized Package with Separate Driver Source Pin ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances APPLICATIONS ·Switch Mode Power Supplies ·EV Battery Charges ·Solar Inverters ·High Voltage DC/DC Converters

文件：328.7 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：TO247-4；Package：C3M0030090K；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.06692 Mbytes 页数：11 Pages

WOLFSPEED

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

900 V Discrete Silicon Carbide MOSFETs

Minimum of 900V Vbr across entire operating temperature rangeLow-impedance package with driver sourceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive • Minimum of 900V Vbr across entire operating temperature range\n• Low-impedance package with driver source\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive;

Wolfspeed(CREE)

SiC MOS

ChipNobo

无边界