丝印：TO247-4；Package：C3M0030090K；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.06692 Mbytes 页数：11 Pages

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丝印：TO247-4；Package：TO247-4；Silicon Carbide Power MOSFET

文件：1.08429 Mbytes 页数：12 Pages

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