丝印：C3M0120065J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • Low inductance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qr

文件：1.14795 Mbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0120065J；Package：TO-263-7；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.14864 Mbytes 页数：11 Pages

Cree

科锐

650 V Discrete Silicon Carbide MOSFETs

Low On-State Resistance over TemperatureLow Parasitic CapacitancesFast Diode with ultra low reverse recoveryHigh Temperature Operation (TJ = 175°C)Kelvin Source PinIndustry Standard Through-Hole & SMT Packages • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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