丝印：C3M0060065J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • Low inductance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qr

文件：1.22367 Mbytes 页数：11 Pages

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丝印：C3M0060065J；Package：TO-263-7；Silicon Carbide Power MOSFET

文件：1.22437 Mbytes 页数：11 Pages

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650 V Discrete Silicon Carbide MOSFETs

Low On-State Resistance over TemperatureLow Parasitic CapacitancesFast Diode with ultra low reverse recoveryHigh Temperature Operation (TJ = 175°C)Kelvin Source PinIndustry Standard Through-Hole & SMT Packages • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages;

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Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：1.291 Mbytes 页数：12 Pages

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Silicon Carbide Power MOSFET

文件：1.2917 Mbytes 页数：12 Pages

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SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 60mΩ（TYP.）@VGS=15V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：532.68 Kbytes 页数：6 Pages

ISC

无锡固电