C3M0060065J中文资料WOLFSPEED数据手册PDF规格书

厂商型号	C3M0060065J
功能描述	Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode
丝印标识	C3M0060065J
封装外壳	TO-263-7
文件大小	1.22367 Mbytes
页面数量	11 页
生产厂商	WOLFSPEED, INC.
企业简称	WOLFSPEED
中文名称	WOLFSPEED, INC.官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 17:58:00
人工找货	C3M0060065J价格和库存，欢迎联系客服免费人工找货

特性 Features

• 3rd Generation SiC MOSFET technology

• Low inductance package with driver source pin

• 7mm of creepage distance between drain and source

• High blocking voltage with low on-resistance

• High speed switching with low capacitances

• Fast intrinsic diode with low reverse recovery (Qrr)

• Halogen free, RoHS compliant

Benefits

• Higher system efficiency

• Reduced cooling requirements

• Increased power density

• Increased system switching frequency

• Easy to parallel and simple to drive

• Enable new hard switching PFC topologies (Totem-Pole)

Applications

• EV charging

• Server power supplies

• Solar PV inverters

• UPS

• DC/DC converters