丝印：C3M0032120J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：964.82 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0032120J1；Package：TO-263-7L-XL；Silicon Carbide Power MOSFET

文件：965.68 Kbytes 页数：11 Pages

Cree

科锐

1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements  • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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