C3M0120100J

Marking：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •Lowparasiticinductancewithseparatedriversourcepin •7mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-resistance •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Lowoutputcapacitance(60pF) •Halog

C3M0120100J

Marking：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

C3M0120100K

SiliconCarbidePowerMOSFETC3MTMMOSFETTechnologyN-ChannelEnhancementMode

Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •

C3M0120100K

C3MTMSiCMOSFETtechnology