丝印：C3M0280090；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Incre

文件：985.63 Kbytes 页数：11 Pages

WOLFSPEED

Silicon Carbide Power MOSFET

文件：1.19782 Mbytes 页数：10 Pages

Cree

科锐

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

900 V Discrete Silicon Carbide MOSFETs

Minimum of 900V Vbr across entire operating temperature rangeLow-impedance package with driver sourceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive • Minimum of 900V Vbr across entire operating temperature range\n• Low-impedance package with driver source\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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