丝印：C3M0900170M；Package：TO-3PF3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Fully isolated package for simplified assembly • High-speed switching with low capacitances • High blocking voltage with low RDS(on) • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Halogen free, RoHS compliant Typical Application

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分立式碳化硅肖特基二极管

1700 V, 900 mΩ, TO-247-3PF package, Industrial qualified Discrete Silicon Carbide (SiC) MOSFET • 12-15V gate drive voltage\n• High speed switching with low capacitances\n• Wide creepage and clearance distance between drain and source;

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V/ 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.02952 Mbytes 页数：13 Pages

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Halogen free, RoHS compliant • Automotive qualified (AEC-Q101) and PPAP capable Typical A

文件：1.07985 Mbytes 页数：13 Pages

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