1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Halogen free, RoHS compliant • Automotive qualified (AEC-Q101) and PPAP capable Typical A

文件：1.07985 Mbytes 页数：13 Pages

WOLFSPEED

分立式二极管

1700 V, 900 mΩ, TO-263-7 package, Automotive qualified, Discrete Silicon Carbide (SiC) MOSFET

Wolfspeed(CREE)

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Ha

文件：4.69333 Mbytes 页数：13 Pages

WOLFSPEED

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.10312 Mbytes 页数：13 Pages

WOLFSPEED

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.10312 Mbytes 页数：13 Pages

WOLFSPEED