丝印：E3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V/ 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.02952 Mbytes 页数：13 Pages

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...15V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Halogen free, RoHS compliant • Automotive qualified (AEC-Q101) and PPAP capable Typical A

文件：1.07985 Mbytes 页数：13 Pages

WOLFSPEED

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Ha

文件：4.69333 Mbytes 页数：13 Pages

WOLFSPEED

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.10312 Mbytes 页数：13 Pages

WOLFSPEED

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.10312 Mbytes 页数：13 Pages

WOLFSPEED