丝印：C3M0350120D；Package：TO-247-3；C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

文件：729.77 Kbytes 页数：10 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low on-resistance ·High-speed switching with low capacitances ·Fast intrinsic diode with low reverse recovery APPLICATIONS ·UPS ·High voltage DC/DC converters ·Switched mode power supplies ·Renewable energy

文件：376.52 Kbytes 页数：2 Pages

ISC

无锡固电

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements  • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements;

Wolfspeed(CREE)