C3M0350120D

丝印：C3M0350120D；Package：TO-247-3；C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc

C3M0350120D

SiC N-Channel MOSFET

FEATURES ·Highblockingvoltagewithlowon-resistance ·High-speedswitchingwithlowcapacitances ·Fastintrinsicdiodewithlowreverserecovery APPLICATIONS ·UPS ·HighvoltageDC/DCconverters ·Switchedmodepowersupplies ·Renewableenergy

C3M0350120D

1200 V Discrete Silicon Carbide MOSFETs; • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements\n;

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements \n\n

C3M0350120D

碳化硅 MOSFET; 低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装\n;

ETC

C3M0350120J

SiliconCarbidePowerMOSFETC3MTMMOSFETTechnologyN-ChannelEnhancementMode

Features •3rdgenerationSiCMOSFETtechnology •Lowimpedancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr