Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) be

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WOLFSPEED

Silicon Carbide Power MOSFET

文件：1.28325 Mbytes 页数：10 Pages

Cree

科锐

900 V Discrete Silicon Carbide MOSFETs

Minimum of 900V Vbr across entire operating temperature rangeLow-impedance package with driver sourceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive • Minimum of 900V Vbr across entire operating temperature range\n• Low-impedance package with driver source\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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