丝印：C3M0350120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr

文件：916.58 Kbytes 页数：10 Pages

WOLFSPEED

1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements  • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements;

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SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low on-resistance ·High-speed switching with low capacitances ·Fast intrinsic diode with low reverse recovery APPLICATIONS ·UPS ·High voltage DC/DC converters ·Switched mode power supplies ·Renewable energy

文件：376.52 Kbytes 页数：2 Pages

ISC

无锡固电

C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

文件：729.77 Kbytes 页数：10 Pages

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