丝印：C3M0120100K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：929.9 Kbytes 页数：11 Pages

WOLFSPEED

C3MTM SiC MOSFET technology

文件：1.05757 Mbytes 页数：11 Pages

Cree

科锐

1000 V Discrete SiC MOSFETs

Minimum of 1kV Vbr across entire operating temperature range (no need to derate)High-speed switching with low output capacitanceFast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to driveKelvin source pin to reduce switching losses and ringing • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)\n• High-speed switching with low output capacitance\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive\n• Kelvin source pin to reduce switching losses and ringing;

Wolfspeed(CREE)

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halog

文件：1.023 Mbytes 页数：10 Pages

WOLFSPEED

Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.33107 Mbytes 页数：10 Pages

Cree

科锐