Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.24533 Mbytes 页数：13 Pages

WOLFSPEED

分立式碳化硅肖特基二极管

1200 V, 32 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET

Wolfspeed(CREE)

Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.25825 Mbytes 页数：13 Pages

WOLFSPEED