丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：664.49 Kbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：926.42 Kbytes 页数：11 Pages

CREE

科锐

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 28.8mΩ@VGS=15V Tj=25℃ ·Low Capacitance ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High Voltage DC-DC Converters ·Battery Chargers

文件：489.85 Kbytes 页数：4 Pages

ISC

无锡固电

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements  • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements;

Wolfspeed(CREE)

SiC MOS

ChipNobo

无边界