30V N-Channel MOSFET

General Description The AO6400 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS 30V ID (at

文件：495.34 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

[SHENZHENFREESCALE] General Description The AO6400 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V

文件：315.85 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：40PL；Package：SOT23-6；N-Channel MOSFET

FEATURES ●Low On-Resistance

文件：345.59 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：40PL；Package：SOT23-6；N-Channel MOSFET

PRODUCT SUMMARY ● VDS (V) =30V ● ID = 6 A ● RDS(ON)

文件：580.32 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

文件：1.75085 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 spec

文件：112.77 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications). F

文件：772.45 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

文件：2.4933 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：41BL；Package：SOT23-6；30V P-Channel MOSFET

Product Summary VDS (V) = -30V ID = -5A (VGS = 10V) RDS(ON)

文件：452.92 Kbytes 页数：7 Pages

UMW

友台半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

文件：2.54907 Mbytes 页数：4 Pages

KEXIN

科信电子