P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

文件：2.51141 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 spec

文件：112.77 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

30V N-Channel MOSFET General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS 30V ID(at VGS =

文件：2.16639 Mbytes 页数：5 Pages

AOSMD

万国半导体

丝印：42**；Package：SOT-26；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the s

文件：279.45 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：42KL；Package：SOT23-6；30V N-Channel MOSFET

Features VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON)

文件：484.5 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：42KLU50；Package：SOT23-6；30V N-Channel MOSFET

General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass th

文件：375.22 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

文件：1.62084 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

文件：1.93437 Mbytes 页数：4 Pages

KEXIN

科信电子

30V N-Channel MOSFET

30V N-Channel MOSFET General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS 30V ID(at VGS =

文件：273.98 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration to form a bidirectional blocking switch. AO6403 is Pb

文件：114.21 Kbytes 页数：4 Pages

AOSMD

万国半导体