P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

文件：2.51141 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 spec

文件：112.77 Kbytes 页数：4 Pages

AOSMD

万国半导体

Ultrahigh-Speed Switching Applications

文件：198.5 Kbytes 页数：4 Pages

SANYO

三洋

DLP Data Processor

文件：1.07028 Mbytes 页数：50 Pages

TI

德州仪器