首页 >2N7002KM-TP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002KQissuitableforautomotiveapplications requirings | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
60VN-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Logic-levelcompatible •Sidewettableflanksforoptical | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SOT-523Plastic-EncapsulateMosfets | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
N-ChannelEnhancementMOSFET | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
ChannelEnhancementMOSFET FEATURES •LowGateChargeforFastSwitching. •ESDProtectedGate. APPLICATIONS •PowerManagementLoadSwitch •ESDProtected:1500V •Easilydesigneddrivecircuits | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelENHANCEMENTMODEPOWERMOSFET FEATURES: *Gate-SourceESDProtected:1500V *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchi | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
NChannelMOSFET | KECKEC CORPORATION KEC株式会社 | KEC | ||
NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V.(HumanBodyModel) •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU | KECKEC CORPORATION KEC株式会社 | KEC | ||
60VN-ChannelMOSFET Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva | Good-Ark Good-Ark | Good-Ark | ||
AdvancedMOSFETprocesstechnology | SILIKRONSilikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,LTD. | SILIKRON | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
Plastic-EncapsulateMOSFETS FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected APPLICATION LoadSwitchforPortableDevices DC/DCConverter | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponreques | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
N-ChannelEnhancementModeMOSFET Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
N-ChannelSMDMOSFETESDProtection Features •RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A •RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A •ESDproduction2kV(Humanbodymode) •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MCC(美微科) |
2112+ |
SOT-723 |
105000 |
8000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
MCC |
22+ |
NA |
40000 |
原装正品 价格极优 |
询价 | ||
MCC-美微科 |
24+25+/26+27+ |
车规-元器件 |
236148 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Micro Commercial Co |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
23+ |
N/A |
58800 |
一级代理放心采购 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD/仙童 |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
NA/ |
57250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
PANJIT/ 强茂 |
19+ |
6000 |
一级代理商,深圳现货 |
询价 | |||
PANJIT/强茂 |
2021+ |
6000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 |
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