N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.04155 Mbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：K7K；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K7K；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：C7；Package：DFN1110D-3；60 V N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Side wettable flanks for optical

文件：281.49 Kbytes 页数：15 Pages

NEXPERIA

安世

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：245.02 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：245.02 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Diodes

美台半导体

60 V N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Side wettable flanks for optical solder inspection\n• Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)\n• AEC-Q101 qualified;

Nexperia

安世