丝印：C7；Package：DFN1110D-3；60 V N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Side wettable flanks for optical

文件：281.49 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Side wettable flanks for optical solder inspection\n• Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)\n• AEC-Q101 qualified;

Nexperia

安世

N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switchi

文件：659.22 Kbytes 页数：5 Pages

WEITRON

Channel Enhancement MOSFET

FEATURES • Low Gate Charge for Fast Switching. • ESD Protected Gate. APPLICATIONS • Power Management Load Switch • ESD Protected:1500V • Easily designed drive circuits

文件：169.65 Kbytes 页数：3 Pages

SECOS

喜可士

N-Channel Enhancement MOSFET

文件：169.65 Kbytes 页数：3 Pages

SECELECTRONICS

上优电子