2N7002KT

N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: *Gate-SourceESDProtected:1500V *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchi

2N7002KT

Channel Enhancement MOSFET

FEATURES •LowGateChargeforFastSwitching. •ESDProtectedGate. APPLICATIONS •PowerManagementLoadSwitch •ESDProtected:1500V •Easilydesigneddrivecircuits

2N7002KT

N-Channel Enhancement MOSFET

2N7002KT

SOT-523 Plastic-Encapsulate Mosfets

2N7002KT1G

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002KT1G

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002KT3G

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002KTB

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

2N7002KTB6

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

2N7002KT_15

N-Channel Enhancement MOSFET

2N7002KT1G

Small Signal MOSFET 60 V, 380 mA, Single, N.Channel, SOT.23

2N7002KT1G

Small Signal MOSFET

2N7002KTB_14

60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant.

2N7002

DMOSTransistors(N-Channel)

2N7002

MinisizeofDiscretesemiconductorelements

2N7002

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns